Quantum efficiency simulations with inputs from spectroscopic ellipsometry for evaluation of carrier collection in a-Si:H solar cells

We have employed optical simulations based on input from ex-situ spectroscopic ellipsometry (SE) to predict external quantum efficiency (EQE) spectra of hydrogenated amorphous silicon (a-Si:H) solar cells prepared using one and two-step i-layers. The simulations are based entirely on structural parameters, including layer thicknesses and material volume fractions, as well as spectroscopic optical properties for each of the component layers. All inputs are derived from through-the-glass and film-side SE analysis of device stacks. A comparison between simulated and measured EQE spectra provide insights into recombination losses in a-Si:H solar cells, as the simulated results are not affected by such losses.