论文信息 - High‐performance GaAs photocathodes

High‐performance GaAs photocathodes

Improved negative electron affinity (NEA) photoemission sensitivity has been obtained from GaAs reflection photocathodes grown from a stoichiometric (rather than arsenic‐rich) vapor phase on {100} substrates. Sensitivities as high as 2150 μA/lm with electron diffusion lengths of ?5μm and escape probabilities of ?0.55 are reported.

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