论文信息 - Sputtering and Implantation of VV-6025X Surface with Slow Heavy Ions Monitored with PIXE

Sputtering and Implantation of VV-6025X Surface with Slow Heavy Ions Monitored with PIXE

In this work the characteristic radiation, emitted during interaction of medium energy (200 keV) ambient heavy ions (Ar) with Fe4Co66Si12B14Nb1Mo2Cu1 (VV-6025X) amorphous alloy, was measured in grazing incident-exit angle geometry and in time sequence, in order to determine dynamics of formation of subsurface region, damaged through implantation, sputtering and interface mixing. It was shown that structure and composition of surface is unstable against heavy ions irradiation due to preferential sputtering and implantation of ions, and recoils, and that the dynamics of such modi cation can be monitored in-situ with particle induced X-ray emission (PIXE) method.

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