Atomic layer deposition of GeSe films using HGeCl3 and [(CH3)3Si]2Se with the discrete feeding method for the ovonic threshold switch
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Young Jae Kwon | Yoon Kyeung Lee | C. Hwang | Han Joon Kim | Sijung Yoo | C. Yoo | J. Jeon | Woohyun Kim | Kyung Seok Woo | Eui-Sang Park