Dielectric constants of amorphous hafnium aluminates: First-principles study
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Tsuyoshi Uda | Takenori Yamamoto | Tomoyuki Hamada | Takahisa Ohno | T. Uda | T. Ohno | Takenori Yamamoto | Hiroyoshi Momida | Yoshiteru Takagi | T. Hamada | Y. Takagi | H. Momida
[1] D. Vanderbilt,et al. Structural and dielectric properties of crystalline and amorphous ZrO2 , 2005 .
[2] Tsuyoshi Uda,et al. Theoretical study on dielectric response of amorphous alumina , 2006 .
[3] Ivo Souza,et al. Metric tensor as the dynamical variable for variable-cell-shape molecular dynamics , 1997 .
[4] D. Vanderbilt,et al. Soft self-consistent pseudopotentials in a generalized eigenvalue formalism. , 1990, Physical review. B, Condensed matter.
[5] Andre Stesmans,et al. Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission , 2003 .
[6] K. Okada,et al. Structural analysis of anodic alumina films , 1979 .
[7] P. Lamparter,et al. Structure of amorphous Al2O3 , 1997 .
[8] E. Hernandez. Metric-tensor flexible-cell algorithm for isothermal–isobaric molecular dynamics simulations , 2001 .
[9] Tsuyoshi Uda,et al. Effects of nitrogen atom doping on dielectric constants of Hf-based gate oxides , 2006 .
[10] G. Rignanese,et al. First-principles investigation of high-κ dielectrics: Comparison between the silicates and oxides of hafnium and zirconium , 2004 .
[11] Hideki Takeuchi,et al. Observation of bulk HfO2 defects by spectroscopic ellipsometry , 2004 .
[12] Gian-Marco Rignanese,et al. Dielectric properties of crystalline and amorphous transition metal oxides and silicates as potential high-κ candidates: the contribution of density-functional theory , 2005 .
[13] J. Robertson. High dielectric constant oxides , 2004 .
[14] Martin L. Green,et al. Hafnium oxide films by atomic layer deposition for high- κ gate dielectric applications: Analysis of the density of nanometer-thin films , 2005 .
[15] Seiichi Miyazaki,et al. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics , 2001 .
[16] R. Wallace,et al. High-κ gate dielectrics: Current status and materials properties considerations , 2001 .
[17] Lee,et al. Thermal conductivity of sputtered oxide films. , 1995, Physical review. B, Condensed matter.
[18] Wang,et al. Accurate and simple analytic representation of the electron-gas correlation energy. , 1992, Physical review. B, Condensed matter.
[19] A. Uedono,et al. Characterization of Hf0.3Al0.7Ox Fabricated by Atomic-Layer-Deposition Technique Using Monoenergetic Positron Beams , 2004 .
[20] H. Herman,et al. Ultra-rapid quenching of laser-melted binary and unary oxides , 1980 .
[21] Jon-Paul Maria,et al. Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.
[22] Binder,et al. Cooling-rate effects in amorphous silica: A computer-simulation study. , 1996, Physical review. B, Condensed matter.
[23] D. Vanderbilt,et al. Theory of polarization of crystalline solids. , 1993, Physical review. B, Condensed matter.
[24] A. Starace. Length and Velocity Formulas in Approximate Oscillator-Strength Calculations , 1971 .
[25] Hao Gong,et al. Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition , 2002 .
[26] Gonzalo Gutiérrez,et al. Molecular dynamics study of structural properties of amorphous Al 2 O 3 , 2002 .
[27] A. Nishiyama,et al. Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing , 2004 .
[28] A. Devenyi,et al. Structural order in amorphous aluminas , 1984 .
[29] Kikuo Yamabe,et al. First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics , 2005 .
[30] P. Hohenberg,et al. Inhomogeneous Electron Gas , 1964 .
[31] Stephen D. Bond,et al. The Nosé-Poincaré Method for Constant Temperature Molecular Dynamics , 1999 .
[32] A. Toriumi,et al. Dielectric constant enhancement due to Si incorporation into HfO2 , 2006 .
[33] Alfredo Pasquarello,et al. Dielectric constants of Zr silicates: a first-principles study. , 2002, Physical review letters.
[34] Raffaele Resta,et al. MACROSCOPIC POLARIZATION IN CRYSTALLINE DIELECTRICS : THE GEOMETRIC PHASE APPROACH , 1994 .
[35] A. Uedono,et al. Characterizing Metal-Oxide Semiconductor Structures Consisting of HfSiOx as Gate Dielectrics using Monoenergetic Positron Beams , 2004 .
[36] Tsuyoshi Uda,et al. First-principles study of dielectric properties of cerium oxide , 2005 .
[37] T. Ma,et al. Effect of Al inclusion in HfO2 on the physical and electrical properties of the dielectrics , 2002, IEEE Electron Device Letters.
[38] A. Curioni,et al. Ab initio design of high-k dielectrics: La(x)Y1-xAlO3. , 2005, Physical review letters.
[39] Hideki Takeuchi,et al. Scaling limits of hafnium–silicate films for gate-dielectric applications , 2003 .
[40] K. S. Shamala,et al. Studies on optical and dielectric properties of Al2O3 thin films prepared by electron beam evaporation and spray pyrolysis method , 2004 .
[41] I. Baumvol,et al. Optical band gaps and composition dependence of hafnium–aluminate thin films grown by atomic layer chemical vapor deposition , 2005 .
[42] W. Kohn,et al. Self-Consistent Equations Including Exchange and Correlation Effects , 1965 .
[43] David Vanderbilt,et al. First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide , 2002 .
[44] E. Cartier,et al. Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues , 2001 .
[45] M. Frey,et al. Bulk glasses and ultrahard nanoceramics based on alumina and rare-earth oxides , 2004, Nature.
[46] Masanori Matsui,et al. Molecular dynamics study of the structures and bulk moduli of crystals in the system CaO-MgO-Al2O3-SiO2 , 1996 .
[47] Kenji Shiraishi,et al. Momentum-matrix-element calculation using pseudopotentials , 1997 .
[48] P. McMillan. Materials science: Flame-broiled alumina , 2004, Nature.