Progress of a CVD-based photoresist 193-nm lithography process

Plasma polymerized organosilane resists films have been shown to exhibit high sensitivity to DUV radiation. We have previously demonstrated a 193nm CVD photoresist process in which plasma polymerized methylsilane (PPMS) is patterned via photo-oxidation, dry-developed, converted into silicon dioxide, and then transferred into an underlying Si layer with high selectivity. The PPMS resist exhibits linearity down to a resolution of 130 nm L/S for a 1:1 pitch. We have demonstrated 100 nm Iso-lines at 28 mJ/cm2 dose with 11 percent dose latitude and 600 nm focus latitude. Depths of focus greater than 500 nm have been demonstrated for 160 nm nested L/S.