for Embedded DRAM

We have developed low temperature SrTi03 (ST) capacitor process for embedded DRAM. ST film deposited at 475°C was crystallized without additional annealing. 0.53nm Si02 equivalent thickness (teq) ST capacitor with Ru electrodes was obtained. The leakage current of the concave structure capacitor was less than IfA/cell at k0.W for 256K 3-dimensional (3D) capacitors fabricated by the low temperature ST process. ST capacitor process can satisfy demands on lower processing temperature and scalability to very thin dielectric layer with low leakage current.