Mechanism of Ambipolar Field-Effect Carrier Injections in One-Dimensional Mott Insulators

To clarify the mechanism of recently reported, ambipolar carrier injections into quasi-one-dimensional Mott insulators on which field-effect transistors are fabricated, we employ the one-dimensiona...

[1]  B. Batlogg,et al.  Ambipolar field-effect carrier injections in organic Mott insulators , 2004 .

[2]  M. Lundstrom,et al.  Ballistic carbon nanotube field-effect transistors , 2003, Nature.

[3]  B. Roux,et al.  A microscopic view of ion conduction through the K+ channel , 2003, Proceedings of the National Academy of Sciences of the United States of America.

[4]  M. Radosavljevic,et al.  Drain voltage scaling in carbon nanotube transistors , 2003, cond-mat/0305570.

[5]  R. Arita,et al.  Breakdown of a Mott insulator: a nonadiabatic tunneling mechanism. , 2003, Physical review letters.

[6]  M. Kuwabara,et al.  Electronic and Lattice Dynamics in the Photoinduced Ionic-to-Neutral Phase Transition in a One-Dimensional Extended Peierls-Hubbard Model , 2002, cond-mat/0211487.

[7]  S. Wind,et al.  Field-modulated carrier transport in carbon nanotube transistors. , 2002, Physical review letters.

[8]  R Martel,et al.  Carbon nanotubes as schottky barrier transistors. , 2002, Physical review letters.

[9]  K. Yonemitsu,et al.  Dimensional Crossovers and Phase Transitions in Strongly Correlated Low-Dimensional Electron Systems , 2002 .

[10]  Hongjie Dai,et al.  Electrical properties and devices of large-diameter single-walled carbon nanotubes , 2002 .

[11]  B. Roux,et al.  Energetics of ion conduction through the K+ channel , 2001, Nature.

[12]  Takayoshi Nakamura,et al.  Mixed-stack organic charge-transfer complexes with intercolumnar networks , 2000 .

[13]  S. Kagoshima,et al.  Electronic states and anti-ferromagnetic order in mixed-stack charge-transfer compound (BEDT-TTF)(F2TCNQ) , 1997 .

[14]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.