论文信息 - Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices - 字舞流文

Impact of trap states on inductive phenomena in 30% InGaN/GaN MQW LED devices

A. Ramdane | O. Özdemir | Q. Gaimard | E. Dogheche | K. Bozkurt | Neslihan Ayarcı Kuruoğlu | B. Alshehri | K. Dogheche