论文信息 - Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst-Ettingshausen effect - 字舞流文

Effect of inhomogeneities of Bi2T3 crystals on the transverse Nernst-Ettingshausen effect

M. K. Zhitinskaya | T. E. Svechnikova | S. Nemov

[1] Inoue,et al. Valence-band energy spectrum of solid solutions of narrow-gap-semiconductor Bi2-xSnxTe3 single crystals. , 1994, Physical review. B, Condensed matter.

[2] J. Horák,et al. Concentration of Free Carriers in Bi2−xInxTe3 Mixed Crystals , 1987 .

[3] D. Ryden. A comparison between the transport properties of single crystal, polycrystal and powder anisotropic semiconductors , 1971 .

[4] G. R. Miller,et al. Anistropy of the Constant-Energy Surfaces in n-Type Bi 2 Te 3 and Bi 2 Se 3 from Galvanomagnetic Coefficients , 1970 .

[5] H. Scherrer,et al. Thermal properties of high quality single crystals of bismuth telluride—Part I: Experimental characterization , 1988 .