Impact of scaling on electrostatics of Germanium-channel MOSFET — analytical study

The electrostatics of germanium-channel MOSFETs is often mentioned as an issue for Ge integration in future technology nodes. In this paper we present two original analytical models for Ge MOSFET electrostatics, developed for bulk and Ge-on-insulator (GeOI) architectures. Using these new models, we show that ultrathin GeOI devices present equivalent threshold voltage control as silicon-on-insulator (SOI) devices.