Impact of scaling on electrostatics of Germanium-channel MOSFET — analytical study
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G. Ghibaudo | T. Skotnicki | S. Monfray | A. Pouydebasque | E. Batail | G. Ghibaudo | T. Skotnicki | S. Monfray | E. Batail | A. Pouydebasque
[1] T. Skotnicki,et al. The voltage-doping transformation: a new approach to the modeling of MOSFET short-channel effects , 1988, IEEE Electron Device Letters.