Simulation study of single event effects in the SiC LDMOS with a step compound drift region

Abstract In this paper, single event effects (SEE) in a proposed high voltage 4H-SiC lateral double-diffused metal-oxide-semiconductor (LDMOS) field-effect transistor is studied by using the 2D TCAD device simulator. Firstly, the sensitive volume of the proposed device is determined by the single ion striking different parts of the device. Then, effect of different LET and different drain bias on the transient drain current and lattice temperature has also been investigated. Thirdly, the mechanism of single event burnout has been discussed in detail. Finally, electric fields in gate oxide have been studied. According to simulation results, the sensitive volume is related to the device structure. Moreover, there is an amplification bipolar effect in the time evolution of the drain current, which is due to the activation of the parasitic bipolar transistor near the source region in the proposed device.

[1]  2.7 kV epitaxial lateral power DMOSFETs in 4H-SiC , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).

[2]  Eiichi Mizuta,et al.  Investigation of single-event damages on silicon carbide (SiC) power MOSFETs , 2013, 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS).

[3]  R. Wilkins,et al.  Single Event Effects in Si and SiC Power MOSFETs Due to Terrestrial Neutrons , 2017, IEEE Transactions on Nuclear Science.

[4]  V. Pouget,et al.  Characterization and modeling of laser-induced single-event burn-out in SiC power diodes , 2013, Microelectron. Reliab..

[5]  Ying Wang,et al.  A SiC LDMOS with electric field modulation by a step compound drift region , 2018, Superlattices and Microstructures.

[6]  Esteban Sanchis-Kilders,et al.  A Comparative Performance Study of a 1200 V Si and SiC MOSFET Intrinsic Diode on an Induction Heating Inverter , 2014, IEEE Transactions on Power Electronics.

[7]  Hiroshi Tadano,et al.  Analysis of neutron-induced single-event burnout in SiC power MOSFETs , 2015, Microelectron. Reliab..

[8]  Qingwen Song,et al.  Investigation of the novel 4HSiC trench MOSFET with non-uniform doping floating islands , 2016 .

[9]  J.S. Yuan,et al.  Reliability and failure mechanisms of lateral MOSFETs in synchronous DC-DC buck converter , 2009, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.

[10]  S. Kuboyama,et al.  Single-Event Burnout of Silicon Carbide Schottky Barrier Diodes Caused by High Energy Protons , 2007, IEEE Transactions on Nuclear Science.

[11]  Dieter Knoll,et al.  Radiation Studies of Power LDMOS Devices for High Energy Physics Applications , 2010, IEEE Transactions on Nuclear Science.

[12]  K. Chatty,et al.  Improved high-voltage lateral RESURF MOSFETs in 4H-SiC , 2001, IEEE Electron Device Letters.

[13]  J. Gong,et al.  Demonstration of 3500-V 4H-SiC Lateral MOSFETs , 2011, IEEE Electron Device Letters.

[14]  Z. Shen,et al.  Numerical and Experimental Investigation of Single Event Effects in SOI Lateral Power MOSFETs , 2011, IEEE Transactions on Nuclear Science.

[15]  N. G. Wright,et al.  SiC sensors: a review , 2007 .

[16]  P Austin,et al.  Sensitive Volume and Triggering Criteria of SEB in Classic Planar VDMOS , 2009, IEEE Transactions on Nuclear Science.

[17]  T. Kimoto,et al.  1580-V-40-m Omega . cm(2) Double-RESURF MOSFETs on 4H-SiC (000(1)over-bar) , 2009 .

[19]  T. Kimoto,et al.  1330 V, 67 m/spl Omega//spl middot/cm/sup 2/ 4H-SiC(0001) RESURF MOSFET , 2005, IEEE Electron Device Letters.

[20]  R. Gutmann,et al.  930-V 170-m/spl Omega//spl middot/cm/sup 2/ lateral two-zone RESURF MOSFETs in 4H-SiC with NO annealing , 2004, IEEE Electron Device Letters.

[21]  Andrea Irace,et al.  SiC power MOSFETs performance, robustness and technology maturity , 2016, Microelectron. Reliab..

[22]  C. Abbate,et al.  Analysis of Heavy Ion Irradiation Induced Thermal Damage in SiC Schottky Diodes , 2015, IEEE Transactions on Nuclear Science.

[23]  H. B. Harrison,et al.  Novel SiC accumulation-mode power MOSFET , 2001 .

[24]  Takuro Tomita,et al.  Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors , 2014 .

[25]  M. Melloch,et al.  Status and prospects for SiC power MOSFETs , 2002 .

[26]  W. Wang,et al.  930, 170Ω.cm2 Lateral Two-Zone RESURF MOSFETs in 4H-SiC with NO Annealing , 2004 .

[27]  E. Meyer,et al.  Device Simulations on Novel High Channel Mobility 4H-SiC Trench MOSFETs and Their Fabrication Processes , 2015 .

[28]  J. R. Brews,et al.  (Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide , 1995 .

[29]  Denis Flandre,et al.  Characterization and modelling of single event transients in LDMOS-SOI FETs , 2011, Microelectron. Reliab..