论文信息 - Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

Si/Si(0.64)Ge(0.36)/Si pMOSFETs with Enhanced Voltage Gain and Low 1/f Noise

Si/Si0.64Fe0.36/Si p MOSFETs with written gate lengths in the range 0.5mu micron to 10mu micron have been fabricated in a reduced thermal budget variant of a standard CMOS process. The devices exhibit enhanced maximum voltage-gains and reduced 1/f noise as compared to silicon controls.

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