Free-carrier contribution to all-optical switching in Mie-resonant hydrogenated amorphous silicon nanodisks

Conventionally, all-optical switching devices made out from bulk silicon and other semiconductors are limited by free-carrier relaxation time which spans from picoseconds to microseconds. In this work, we discuss the possibility to suppress the undesired long free-carrier relaxation in subwavelength dielectric nanostructures exhibiting localized magnetic Mie resonances. Numerical calculations show the unsymmetrical modification of the transmittance spectra of the nanodisks due the free carriers photo-injection. Such a spectral dependance allows to control temporal response of the nanostructure by varying the laser pulse spectum.

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