Sputter-Deposited La2O3 on p-GaAs for Gate Dielectric Applications

[1]  Weichao Wang,et al.  Si passivation effects on atomic bonding and electronic properties at HfO2/GaAs interface: A first-principles study , 2011 .

[2]  Y. Yeo,et al.  Role of AlxGa1−xAs buffer layer in heterogeneous integration of GaAs/Ge , 2011 .

[3]  G. Dalapati,et al.  Interfacial and Electrical Characterization of Atomic-Layer-Deposited HfO2 Gate Dielectric on High Mobility Epitaxial GaAs/Ge Channel Substrates , 2010 .

[4]  D. Webb,et al.  H plasma cleaning and a-Si passivation of GaAs for surface channel device applications , 2009 .

[5]  A. Dimoulas,et al.  Lanthanum germanate as dielectric for scaled Germanium metal-oxide-semiconductor devices , 2009 .

[6]  Robert M. Wallace,et al.  Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning , 2009 .

[7]  Goutam Kumar Dalapati,et al.  HfOxNy gate dielectric on p-GaAs , 2009 .

[8]  K. Saraswat,et al.  Double-Gate Strained-Ge Heterostructure Tunneling FET (TFET) With record high drive currents and ≪60mV/dec subthreshold slope , 2008, 2008 IEEE International Electron Devices Meeting.

[9]  A. Dimoulas,et al.  Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates , 2008 .

[10]  V. Misra,et al.  Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric , 2008 .

[11]  R. Wallace,et al.  In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As , 2008 .

[12]  E. Vogel,et al.  S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates , 2008 .

[13]  Tomonori Nishimura,et al.  Control of high-k/germanium interface properties through selection of high-k materials and suppression of GeO volatilization , 2008 .

[14]  S. Banerjee,et al.  Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates , 2008 .

[15]  D. Webb,et al.  Inversion mode n-channel GaAs field effect transistor with high-k/metal gate , 2008 .

[16]  Athanasios Dimoulas,et al.  Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices , 2008 .

[17]  G. Dalapati,et al.  Interfacial characteristics and band alignments for ZrO2 gate dielectric on Si passivated p-GaAs substrate , 2007 .

[18]  A. Asenov,et al.  Enhancement-Mode GaAs MOSFETs With an $\hbox{In}_{0.3} \hbox{Ga}_{0.7}\hbox{As}$ Channel, a Mobility of Over 5000 $ \hbox{cm}^{2}/\hbox{V} \cdot \hbox{s}$, and Transconductance of Over 475 $\mu\hbox{S}/\mu\hbox{m}$ , 2007, IEEE Electron Device Letters.

[19]  M. Caymax,et al.  Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures , 2007 .

[20]  A. Dimoulas,et al.  Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate dielectric , 2007 .

[21]  H. Iwai,et al.  Improvement of interfacial properties with interfacial layer in La2O3/Ge structure , 2007 .

[22]  G. Dalapati,et al.  Electrical and Interfacial Characterization of Atomic Layer Deposited High- $\kappa$ Gate Dielectrics on GaAs for Advanced CMOS Devices , 2007, IEEE Transactions on Electron Devices.

[23]  J. Ha,et al.  5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties , 2006 .

[24]  David J. Webb,et al.  Evidence of electron and hole inversion in GaAs metal-oxide-semiconductor capacitors with HfO2 gate dielectrics and α-Si∕SiO2 interlayers , 2006 .

[25]  Peide D. Ye,et al.  Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs , 2006 .

[26]  Y. Tsang,et al.  Impact of strained-Si thickness and Ge out-diffusion on gate oxide quality for strained-Si surface channel n-MOSFETs , 2006, IEEE Transactions on Electron Devices.

[27]  M. Yakimov,et al.  Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer , 2006 .

[28]  Jun-Kyu Yang,et al.  Chemical bonding states and energy band gap of SiO2-incorporated La2O3 films on n-GaAs (001) , 2006 .

[29]  Hyung‐Ho Park,et al.  Energy band structure and electrical properties of (La2O3)1−x(SiO2)x(0⩽x⩽1)∕n-GaAs(001) system , 2005 .

[30]  Zhi-guo Liu,et al.  Growth and characteristics of La2O3 gate dielectric prepared by low pressure metalorganic chemical vapor deposition , 2004 .

[31]  T. Gougousi,et al.  Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species , 2004 .

[32]  J. Robertson,et al.  Stability and band offsets of nitrogenated high-dielectric-constant gate oxides , 2004 .

[33]  M. Passlack,et al.  Thermally induced oxide crystallinity and interface destruction in Ga2O3-GaAs structures , 2003 .

[34]  G. Botton,et al.  Structural comparison of gadolinium and lanthanum silicate films on Si(1 0 0) by HRTEM, EELS and SAED , 2002 .

[35]  J. Crocombette,et al.  Bonding and XPS chemical shifts in ZrSiO 4 versus SiO 2 and ZrO 2 : Charge transfer and electrostatic effects , 2001 .

[36]  E. Cartier,et al.  Formation of a stratified lanthanum silicate dielectric by reaction with Si(001) , 2001 .

[37]  Z. Rivera-Alvarez,et al.  GaAs surface oxide desorption by annealing in ultra high vacuum , 2000 .

[38]  Jon-Paul Maria,et al.  Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.

[39]  A. Chin,et al.  Electrical characteristics of high quality La2O3 gate dielectric with equivalent oxide thickness of 5 /spl Aring/ , 2000, IEEE Electron Device Letters.

[40]  M. Ogasawara,et al.  Influence of nitrogen incorporation in ultrathin SiO2 on the structure and electronic states of the SiO2/Si(100) interface , 2000 .

[41]  H. Seifert,et al.  Enthalpy of Formation of Rare-earth Silicates Y_2SiO_5 and Yb_2SiO_5 and N-containing Silicate Y_10(SiO_4)_6N_2 , 1999 .

[42]  Hong,et al.  Epitaxial cubic gadolinium oxide as a dielectric for gallium arsenide passivation , 1999, Science.

[43]  H. Morkoç,et al.  Thermal stability of Si3N4/Si/GaAs interfaces , 1997 .

[44]  D. Schlom,et al.  Thermodynamic stability of binary oxides in contact with silicon , 1996 .

[45]  Daniel M. Fleetwood,et al.  Oxide, interface, and border traps in thermal, N2O, and N2O‐nitrided oxides , 1996 .

[46]  M. Gendry,et al.  Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers. , 1994, Physical review. B, Condensed matter.

[47]  H. Hasegawa,et al.  Control of compound semiconductor–insulator interfaces by an ultrathin molecular‐beam epitaxy Si layer , 1989 .

[48]  G. Hollinger,et al.  New depth-profiling method by angular-dependent x-ray photoelectron spectroscopy , 1981 .

[49]  L. Terman An investigation of surface states at a silicon/silicon oxide interface employing metal-oxide-silicon diodes , 1962 .