Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation
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C. Kim | Yang‐Kyu Choi | K. Choi | H. Bae | E. Jeong | M. Lee | Youngjun Kim | Jeong‐Gyu Song | Whang Je Woo | Eungtaek Kim | Hyungjun Kim | Seong-Bae Jeon | J. Song