Low-threshold InGaAs/GaAs single-quantum-well lasers using single-step metalorganic chemical vapor deposition

Low threshold current single quantum well InGaAs/GaAs lasers are fabricated by metalorganic chemical vapor deposition on a nonplanar substrate. By taking advantage of the growth rate and doping differences on different crystal facets during the growth, an almost- buried heterostructure laser is made by a single growth step. Threshold currents as low as 1.0 mA under pulsed operation and 1.2 mA under continuous-wave operation are obtained for uncoated lasers at room-temperature. The lasers showed high external quantum efficiency (80%). High reflection coated laser (95%/95%) has a cw threshold current as low as 0.28 mA.