Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes

We report on the fabrication and emission characteristics of InGaAs/GaAs quantum dot microtube ring resonators on Si substrates achieved using a simple but controllable substrate-on-substrate transfer process. We have observed three-dimensionally confined optical modes, including both radial and axial field distributions from quantum dot microtubes on Si with an engineered geometry at 77 K, which agrees well with results calculated using a photonic quasi-Schrodinger equation. An intrinsic Q-factor of ∼2000 is also derived.

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