Post‐irradiation cracking of H2 and formation of interface states in irradiated metal‐oxide‐semiconductor field‐effect transistors
暂无分享,去创建一个
Arthur H. Edwards | David L. Griscom | B. J. Mrstik | Robert E. Stahlbush | A. Edwards | D. Griscom | R. Stahlbush | B. Mrstik
[1] A. Edwards,et al. Theory of the peroxy-radical defect in a -Si O 2 , 1982 .
[2] James Stasiak,et al. Trap creation in silicon dioxide produced by hot electrons , 1989 .
[3] N. Saks,et al. Observation of H/sup +/ motion during interface trap formation , 1990 .
[4] F. J. Grunthaner,et al. Radiation-Induced Defects in SiO2 as Determined with XPS , 1982, IEEE Transactions on Nuclear Science.
[5] Stesmans,et al. Observation of dipolar interactions between Pb0 defects at the (111) Si/SiO2 interface. , 1990, Physical review. B, Condensed matter.
[6] P. S. Winokur,et al. Two‐stage process for buildup of radiation‐induced interface states , 1979 .
[7] A. Goetzberger,et al. Expedient method of obtaining interface state properties from MIS conductance measurements , 1969 .
[8] T. R. Oldham,et al. Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing , 1986, IEEE Transactions on Nuclear Science.
[9] W. Richards,et al. Geometric components of charge pumping current in SOS devices , 1989 .
[10] S. Lai,et al. Two‐carrier nature of interface‐state generation in hole trapping and radiation damage , 1981 .
[11] T. P. Ma,et al. Ionizing radiation effects in MOS devices and circuits , 1989 .
[12] F. B. McLean. A Framework for Understanding Radiation-Induced Interface States in SiO2 MOS Structures , 1980, IEEE Transactions on Nuclear Science.
[13] J. Shelby. Reaction of hydrogen with hydroxyl‐free vitreous silica , 1980 .
[14] P. Balk,et al. Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing , 1988 .
[15] N. Johnson,et al. Interface traps and Pb centers in oxidized (100) silicon wafers , 1986 .
[16] John Crank,et al. The Mathematics Of Diffusion , 1956 .
[17] K. L. Brower. Passivation of paramagnetic Si‐SiO2 interface states with molecular hydrogen , 1988 .
[18] N. Saks,et al. Interface trap formation via the two-stage H/sup +/ process , 1989 .
[19] R. K. Lawrence,et al. Post-irradiation behavior of the interface state density and the trapped positive charge , 1990 .
[20] H. E. Boesch,et al. Reversibility of trapped hole annealing , 1988 .
[21] D. Griscom. Electron spin resonance characterization of self-trapped holes in amorphous silicon dioxide , 1992 .
[22] P. Bischof. Unrestricted open-shell calculations by MINDO/3. Geometries and electronic structure of radicals , 1976 .
[23] W. Fowler,et al. Oxygen vacancy model for the E1′ center in SiO2 , 1974 .
[24] E. J. Friebele,et al. ESR studies of damage processes in X‐irradiated high purity a‐SiO2:OH and characterization of the formyl radical defect , 1983 .
[25] S. Wang,et al. Low−temperature irradiation effects in SiO2−insulated MIS devices , 1975 .
[26] J. E. Shelby,et al. Molecular diffusion and solubility of hydrogen isotopes in vitreous silica , 1977 .
[27] R. A. Kushner,et al. Total dose radiation hardness of MOS devices in hermetic ceramic packages , 1988 .
[28] G. Groeseneken,et al. A reliable approach to charge-pumping measurements in MOS transistors , 1984, IEEE Transactions on Electron Devices.
[29] K. Aubuchon,et al. Radiation Hardening of P-MOS Devices by Optimization of the Thermal Si02 Gate Insulator , 1971 .
[30] Patrick M. Lenahan,et al. Defects and impurities in thermal oxides on silicon , 1982 .
[31] David L. Griscom,et al. Thermal bleaching of x-ray-induced defect centers in high purity fused silica by diffusion of radiolytic molecular hydrogen , 1984 .
[32] Yoav Nissan-Cohen. The effect of hydrogen on hot carrier radiation immunity of MOS devices , 1989 .
[33] David L. Griscom,et al. Formation of interface traps in MOSFETs during annealing following low temperature irradiation , 1988 .
[34] Donald R. Young,et al. Hydrogen migration under avalanche injection of electrons in Si metal‐oxide‐semiconductor capacitors , 1983 .
[35] Michael J. S. Dewar,et al. Ground states of molecules. XXV. MINDO/3. Improved version of the MINDO semiempirical SCF-MO method , 1975 .
[36] W. C. Johnson,et al. Relationship between x‐ray‐produced holes and interface states in metal‐oxide‐semiconductor capacitors , 1983 .
[37] Griscom. Self-trapped holes in amorphous silicon dioxide. , 1989, Physical review. B, Condensed matter.
[38] J. M. Andrews,et al. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents , 1971 .
[39] Patrick M. Lenahan,et al. Hole traps and trivalent silicon centers in metal/oxide/silicon devices , 1984 .
[40] R. Weeks. Paramagnetic Spectra ofE2′Centers in Crystalline Quartz , 1963 .
[41] V. R. Saunders,et al. A “Level–Shifting” method for converging closed shell Hartree–Fock wave functions , 1973 .
[42] J. E. Shelby,et al. Radiation effects in hydrogen‐impregnated vitreous silica , 1979 .
[43] Tso-Ping Ma,et al. Interface trap transformation in radiation or hot-electron damaged MOS structures , 1989 .