Tailoring of infrared photorefractive properties of Sn 2 P 2 S 6 crystals by Te and Sb doping

The photorefractive properties of Sn2P2S6 crystals doped with Te and Sb in the near-infrared wavelength range up to 1064 nm are reported. The main photorefractive parameters, i.e., two-wave mixing gain, effective electro-optic coefficient, diffusion length, concentration of traps, and response time, are compared with conventional nominally pure Sn2P2S6. Te-doped Sn2P2S6 shows the fastest response with the smallest decrease of the photorefractive efficiency with increasing wavelength in the near infrared. Sb doping, on the other hand, inhibits photorefraction in the near infrared. Sn2P2S6:Te and Sn2P2S6:Sb crystals both show a high two-wave mixing gain Γ at 633 nm, and 10 and 20 cm−1. Te-doped Sn2P2S6 shows a photorefractive gain of 4.5 cm−1 at 1064 nm. Response times at 1064 nm of 20 ms have been measured for the intensity 6 W/cm2, which is 2 orders of magnitude shorter than in Rh-doped BaTiO3.

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