Leakage currents of n+p silicon diodes with different amounts of dislocations

Abstract Leakage currents in n+p silicon planar-diodes appeared to be related to the presence of dislocations, revealed by an X-ray topographic technique, in and near the n+ regions. Electrical measurements revealed a dominant bulk recombination—generation level, 0·055 eV. below the middle of the energy gap, and with τ p0 τ n0 >1 . This latter fact indicates a donor type defect. Surface recombination-generation currents were minimized by using a MOS type guard ring.