Thin films of ZnTe single crystal were grown successfully on germanium substrates by molecular beam epitaxy. The epitaxy condition and evaluation of the grown films were extensively investigated. The evaluation and the analysis were made with a scanning electron microscope, an ion microprobe analyser, an electron-probe microanalyser, and measurements of the current-voltage characteristics and photoluminescence spectra. Twin-free and stoichiometric ZnTe films with smooth and flat surface were grown at the growth rate less than 2 Å/sec and for the substrate temperatures between 360°C and 400°C. Photoluminescence spectra of the films show sharp near-band-edge emission bands.