论文信息 - Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams - 字舞流文

Vacancy-type defects in InxGa1−xN grown on GaN templates probed using monoenergetic positron beams

A. Uedono | L. Sang | S. Ishibashi | M. Lozac’h | M. Sumiya | R. Suzuki | Yang Zhang | Tomohito Watanabe | S. Kimura | N. Oshima