Unique spatial solitons in Gunn‐instability semiconductors

A novel and unique principle for generating spatial solitons is presented, which is based on a balance between the diffusion of carriers and their nonlinear velocity‐field characteristic in a compound semiconductor such as GaAs. In striking contrast to conventional solitons for electromagnetic radiation, the present soliton is supported solely by the longitudinal electric field. The soliton parameters such as the peak amplitude and the beam width can be controlled with varying the concentration of ionized donors.

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