The effects of stress, temperature, and spin flips on polarization switching in vertical-cavity surface-emitting lasers

We discuss the effect of uniaxial planar stress on polarization switching in vertical-cavity surface-emitting lasers (VCSELs). The approach is based on an explicit form of a frequency-dependent complex susceptibility of the uniaxially stressed quantum-well semiconductor material. In this mesoscopic framework, we have taken cavity anisotropies, spin carrier dynamics, and thermal shift of the gain curve into account. In this way, we present a model that provides a global overview of the polarization switching phenomenon. The results are compared with experiments on an air-post VCSEL operating at 980 nm

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