A high-performance non-isolated DC-DC buck converter design based on wide bandgap power devices

Due to the limitations in the operating conditions of the conventional silicon (Si) power device based dc-dc buck converters as well as its notable power losses, there is an increased interest and need to exploit the promising features of wide bandgap power devices toward more efficient converters. This paper presents the design of an efficient, high performance and reliable non-isolated dc-dc buck converter based on silicon carbide (SiC) power devices. First, the converter is designed using the SiC-MOSFET/SiC-Schottky diode power devices and it is compared with the CoolMOS/Si-diode based converter. A comprehensive study is done in terms of high switching frequency capabilities, different junction temperatures, as well as with a wide range of output load currents. The results show that a substantial and advanced amelioration in the efflciency for the designed SiC-MOSFET/SiC-Schottky diode based converter at operating conditions that include high switching frequencies, high junction temperatures, as well as at high and low output load currents.

[1]  Vivek Agarwal,et al.  Novel soft switched interleaved DC-DC converters for integration of renewable sources and storage into low voltage DC micro grid , 2015, 2015 IEEE 6th International Symposium on Power Electronics for Distributed Generation Systems (PEDG).

[2]  Frede Blaabjerg,et al.  Comprehensive evaluation on efficiency and thermal loading of associated Si and SiC based PV inverter applications , 2013, IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society.

[3]  D. Boroyevich,et al.  Evaluation of the switching characteristics of a gallium-nitride transistor , 2011, 2011 IEEE Energy Conversion Congress and Exposition.

[4]  H. Akagi,et al.  Power-Loss Breakdown of a 750-V 100-kW 20-kHz Bidirectional Isolated DC–DC Converter Using SiC-MOSFET/SBD Dual Modules , 2015, IEEE Transactions on Industry Applications.

[5]  Fred Wang,et al.  Development of Advanced All-SiC Power Modules , 2014, IEEE Transactions on Power Electronics.

[6]  Sei-Hyung Ryu,et al.  Recent progress in SiC DMOSFETs and JBS diodes at Cree , 2008, 2008 34th Annual Conference of IEEE Industrial Electronics.

[7]  Ali Ajami,et al.  A Novel Step-Up Multiinput DC–DC Converter for Hybrid Electric Vehicles Application , 2017, IEEE Transactions on Power Electronics.

[8]  Ned Mohan,et al.  Power electronics : a first course , 2011 .

[9]  Zhan Wang,et al.  Asymmetrical Duty Cycle Control and Decoupled Power Flow Design of a Three-port Bidirectional DC-DC Converter for Fuel Cell Vehicle Application , 2012, IEEE Transactions on Power Electronics.

[10]  F. Canales,et al.  A Comparative Performance Study of an Interleaved Boost Converter Using Commercial Si and SiC Diodes for PV Applications , 2013, IEEE Transactions on Power Electronics.

[11]  Ali Emadi,et al.  An On-Line UPS System With Power Factor Correction and Electric Isolation Using BIFRED Converter , 2008, IEEE Transactions on Industrial Electronics.

[12]  T. Kimoto,et al.  Progress in ultrahigh-voltage SiC devices for future power infrastructure , 2014, 2014 IEEE International Electron Devices Meeting.

[13]  P. Friedrichs,et al.  Silicon carbide power devices - status and upcoming challenges , 2007, 2007 European Conference on Power Electronics and Applications.

[14]  Jos H. Schijffelen,et al.  Design and Comparison of a 10-kW Interleaved Boost Converter for PV Application Using Si and SiC Devices , 2017, IEEE Journal of Emerging and Selected Topics in Power Electronics.

[15]  Chung-Yuen Won,et al.  Interleaved Soft-Switching Boost Converter for Photovoltaic Power-Generation System , 2011, IEEE Transactions on Power Electronics.

[16]  B. Hull,et al.  High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications , 2016, IEEE Transactions on Power Electronics.

[17]  Xinke Wu,et al.  An All-SiC High-Frequency Boost DC–DC Converter Operating at 320 °C Junction Temperature , 2014, IEEE Transactions on Power Electronics.

[18]  J. Wilde,et al.  Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices , 2015, IEEE Transactions on Components, Packaging and Manufacturing Technology.

[19]  Philippe Godignon,et al.  A Survey of Wide Bandgap Power Semiconductor Devices , 2014, IEEE Transactions on Power Electronics.

[20]  C. Zetterling,et al.  SiC power devices — Present status, applications and future perspective , 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

[21]  F. Lee,et al.  Characterization and Enhancement of High-Voltage Cascode GaN Devices , 2015, IEEE Transactions on Electron Devices.

[22]  S. Bhattacharya,et al.  Design Comparison of High-Power Medium-Voltage Converters Based on a 6.5-kV Si-IGBT/Si-PiN Diode, a 6.5-kV Si-IGBT/SiC-JBS Diode, and a 10-kV SiC-MOSFET/SiC-JBS Diode , 2014, IEEE Transactions on Industry Applications.

[23]  Sheldon S. Williamson,et al.  Comprehensive review of PV/EV/grid integration power electronic converter topologies for DC charging applications , 2014, 2014 IEEE Transportation Electrification Conference and Expo (ITEC).

[24]  F. Blaabjerg,et al.  A novel electro-thermal model for wide bandgap semiconductor based devices , 2013, 2013 15th European Conference on Power Electronics and Applications (EPE).