Elements of semiconductor-device reliability

Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality. Failure rates are presented for transistors and for both bipolar and MOS integrated circuits in several types of packages and for several kinds of device process technology.

[1]  D. S. Peck,et al.  The Analysis of Data from Accelerated Stress Tests , 1971 .

[2]  Bernard Selikson.  Failure Mechanisms in Integrated Circuit Interconnect Systems , 1967 .

[3]  P. H. Eisenberg,et al.  Investigation of Surface Failure Mechanisms in Semiconductor Devices by Envelope Ambient Studies , 1965 .

[4]  A. S. Grove,et al.  Characteristics of the Surface‐State Charge (Qss) of Thermally Oxidized Silicon , 1967 .

[5]  R. C. Pitetti.  Electromigration of TiPdAu Conductors , 1972 .

[6]  V. Reddi.  Influence of surface conditions on silicon planar transistor current gain , 1967 .

[7]  A. S. Grove,et al.  The origin of channel currents associated with P + regions in silicon , 1965 .

[8]  Robert Beard.  Evolution of a High-Reliability Molded DIP , 1972 .

[9]  R. Rosenberg,et al.  Electromigration Damage in Al-Cu Thin Films , 1971 .

[10]  D. V. Sulway,et al.  Scanning electron microscopy in device diagnostics and reliability physics , 1969 .

[11]  G. L. Schnable,et al.  Failure mechanisms in large-scale integrated circuits , 1969 .

[12]  J. M. Morris,et al.  Scanning electron mirror microscopy and scanning electron microscopy of integrated circuits , 1969 .

[13]  G. Gibbons,et al.  Effect of junction curvature on breakdown voltage in semiconductors , 1966 .

[14]  B. Mcdonald.  Ionic contamination-induced degradation of low current hFE , 1971 .

[15]  John W. Adolphsen,et al.  A Failure Mechanism of Semiconductor Devices and its Analysis , 1967 .

[16]  John D. Venables,et al.  A Statistical Model for Electromigration Induced Failure in Thin Film Conductors , 1972 .

[17]  R. C. Olberg.  The Effects of Epoxy Encapsulant Composition on Semiconductor Device Stability , 1971 .

[18]  R. J. Anderson,et al.  Investigation of Plastic Effects on Semiconductor Reliability. , 1969 .

[19]  M. P. Lepselter,et al.  Silicon schottky barrier diode with near-ideal I-V characteristics , 1968 .

[20]  A. Gangulee,et al.  Effects of Complex Alloy Additions on Electromigration in Aluminum Thin Films , 1972 .

[21]  J. M. Eldridge,et al.  Sodium Ion Drift through Phosphosilicate Glass ‐ SiO2 Films , 1971 .

[22]  P. C. Parekh,et al.  Observations of EE dislocations using Sirtl etchant and their influence on transistor parameters , 1970 .

[23]  J. D. Guttenplan,et al.  Failure Mechanisms Associated with Die-to-Header Bonds of Planar Transistors , 1965 .

[24]  E. H. Snow,et al.  Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon , 1966 .

[25]  P. Ghate,et al.  SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMS , 1967 .

[26]  A. Hornung.  Reliability of Molybdenum Thin Films in Humid Atmospheres , 1972 .

[27]  C. B. Oliver,et al.  Theory of the Failure of Semiconductor Contacts by Electromigration , 1970 .

[28]  G. L. Schnable,et al.  The Effects of Insulator Surface-Ion Migration on MOS and Bipolar Integrated Circuits , 1970 .

[29]  J. Black.  Electromigration failure modes in aluminum metallization for semiconductor devices , 1969 .

[30]  R. Gurtler.  Avalanche drift instability in planar passivated p-n junctions , 1968 .

[31]  T. E. Hartman,et al.  Electromigration in thin gold films , 1969 .

[32]  J C Inkson,et al.  An investigation of inversion layer induced leakage current in abrupt p-n junctions , 1970 .

[33]  R. Benham.  The development of improved epoxy molding compounds for microcircuit encapsulation , 1971 .

[34]  Oliver C. Wells,et al.  Coating, Mechanical Constraints, and Pressure Effects on Electromigration , 1972 .

[35]  Wilton L. Workman.  Failure Analysis Techniques , 1964 .

[36]  Robert J. Anstead.  Failure Analysis using a Scanning Electron Microscope , 1967 .

[37]  William A. Pliskin,et al.  Stabilization of SiO2 Passivation Layers with P2O5 , 1964, IBM J. Res. Dev..

[38]  D. J. Thomas,et al.  Surface Damage and Copper Precipitation in Silicon , 1963 .

[39]  Elliott Philofsky.  Purple Plague Revisited , 1970 .

[40]  F. P. Heiman,et al.  Use of HCl Gettering in Silicon Device Processing , 1971 .

[41]  N. J. Chou,et al.  Effects of Material and Processing Parameters on the Dielectric Strength of Thermally Grown SiO2 Films , 1970 .

[42]  E. Kooi,et al.  Effects of Low-Temperature Heat Treatments on the Surface Properties of Oxidized Silicon , 1967 .

[43]  B. A. McDonald,et al.  The SEM as a Defect Analysis Tool for Semiconductor Memories , 1971 .

[44]  R. Rosenberg,et al.  Electromigration Damage in Aluminum Film Conductors , 1970 .

[45]  G. L. Schnable,et al.  The application of test structures for the study of surface effects in LSI circuitry , 1969 .

[46]  J. R. Pierce,et al.  Scientific foundations of vacuum technique , 1949 .

[47]  Dennis R. Kerr,et al.  A Review of Instability Mechanisms in Passivation Films , 1970 .

[48]  G. L. Schnable,et al.  Behavior of surface ions on semiconductor devices , 1968 .

[49]  R. P. Donovan.  The Oxide-Silicon Interface , 1966 .

[50]  F. L. Worthing.  D‐C Dielectric Breakdown of Amorphous Silicon Dioxide Films at Room Temperature , 1968 .

[51]  S. M. Deshpande.  Aluminum-Aluminum Oxide Metallurgy for Enhanced Electromigration Resistance in Monolithic Circuits , 1971 .

[52]  S. Spitzer,et al.  The effects of dielectric overcoating on electromigration in aluminum interconnections , 1969 .

[53]  J. R. Haberer.  Photoresponse Mapping of Semiconductors , 1966 .

[54]  W. M. Bullis,et al.  Measurement standards for integrated circuit processing , 1969 .

[55]  L. H. Kaplan,et al.  Phosphosilicate Glass Stabilization of MOS Structures , 1971 .

[56]  George A. Brown,et al.  A Process Control Test for Lateral Charge Spreading Susceptibility , 1973 .

[57]  A. S. Grove,et al.  Effect of surface fields on the breakdown voltage of planar silicon p-n junctions , 1967 .

[58]  S. Behera,et al.  A Procedure for the Evaluation and Failure Analysis of M.O.S. Memory Circuits using the Scanning Electron Microscope in Potential Contrast Mode , 1972 .

[59]  Clyde H. Lane,et al.  Aluminum metallization and contacts for integrated circuits , 1970 .

[60]  J. M. Eldridge,et al.  Polarization of Thin Phosphosilicate Glass Films in MGOS Structures , 1969 .

[61]  J. J. Bart.  The analysis of chemical and metallurgical changes in microcircuit metalization systems , 1969 .

[62]  W. Schroen.  Accumulation and Decay of Mobile Surface Charges on Insulating Layers and Relationship to Reliability of Silicon Devices , 1965 .

[63]  J. Drobek,et al.  Structure and Sodium Migration in Silicon Nitride Films , 1968 .

[64]  I. Blech,et al.  The Failure of Thin Alluminum Current-Carrying Strips on Oxidized Silicon , 1966 .

[65]  R. H. Cox,et al.  The application of the scanning electron microscope to the development of high-reliability semiconductor products , 1969 .

[66]  A. S. Grove.  Physics and Technology of Semiconductor Devices , 1967 .

[67]  I. Ames,et al.  Reduction of electromigration in aluminum films by copper doping , 1970 .

[68]  W. Shepherd,et al.  Reduction of Electromigration-Induced Failure in Aluminum Metallization Through Anodization , 1971 .

[69]  Robert J. Anstead,et al.  Use a SEM on a Production Line , 1970 .

[70]  George L. Schnable,et al.  Mechanisms of Contact Failure in Semiconductor Devices , 1967 .