Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
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A. Uedono | M. Saito | K. Fujito | S. Kubo | S. Chichibu | Y. Mikawa | K. Kojima | Yusuke Tsukada | H. Ikeda | E. Furukawa