Switch-off behavior of floating-body PD SOI MOSFET's
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[1] J.G. Fossum,et al. Transient drain current and propagation delay in SOI CMOS , 1984, IEEE Transactions on Electron Devices.
[2] B. Lalevic,et al. Frequency dependent propagation delay in silicon-on-sapphire digital integrated circuits , 1978 .
[3] Jerry G. Fossum,et al. A physical charge-based model for non-fully depleted SOI MOSFET's and its use in assessing floating-body effects in SOI CMOS circuits , 1995 .
[4] S.S. Eaton,et al. The effect of a floating substrate on the operation of silicon-on-sapphire transistors , 1978, IEEE Transactions on Electron Devices.
[5] A. Wei,et al. Transient behavior of the kink effect in partially-depleted SOI MOSFET's , 1995, IEEE Electron Device Letters.
[6] M. Matloubian,et al. Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET's , 1987, IEEE Electron Device Letters.
[7] M. Racanelli,et al. Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices , 1996 .
[8] Y.A. El-Mansy,et al. Characterization of silicon-on-sapphire IGFET transistors , 1977, IEEE Transactions on Electron Devices.
[9] J. Tihanyi,et al. Properties of ESFI MOS transistors due to the floating substrate and the finite volume , 1974, IEEE Transactions on Electron Devices.
[10] K. Kato,et al. Numerical analysis of switching characteristics in SOI MOSFET's , 1986, IEEE Transactions on Electron Devices.
[11] F. Assaderaghi,et al. Transient behavior of subthreshold characteristics of fully depleted SOI MOSFETs , 1991, IEEE Electron Device Letters.