Physical aspects of ion beam assisted deposition
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G. P. Mueller | G. Hubler | M. Rosen | C. Carosella | T. Andreadis | E. Donovan | D. Vanvechten | R. Bassel
[1] K. Vedam,et al. Investigation of the void structure in amorphous germanium thin films as a function of low-energy ion bombardment , 1988 .
[2] D. R. Brighton,et al. Binary collision cascade prediction of critical ion-to-atom arrival ratio in the production of thin films with reduced intrinsic stress , 1987 .
[3] K. Müller. Stress and microstructure of sputter‐deposited thin films: Molecular dynamics investigations , 1987 .
[4] T. Motooka,et al. The role of ion/surface interactions and photo-induced reactions during film growth from the vapor phase , 1987 .
[5] Müller,et al. Ion-beam-induced epitaxial vapor-phase growth: A molecular-dynamics study. , 1987, Physical review. B, Condensed matter.
[6] S. Rossnagel,et al. Ion-Beam-Assisted Deposition and Synthesis , 1987 .
[7] R P Netterfield,et al. Ion-Assisted Processes In Optical Thin Film Deposition , 1986, Optics & Photonics.
[8] A. Rockett,et al. A review of the present understanding of the role of ion/surface interactions and photo-induced reactions during vapor-phase crystal growth , 1986 .
[9] W. Tiller,et al. Controlled Reactive Sputter Synthesis of Refractory Oxides , The Silicon‐Oxygen System , 1984 .
[10] D. S. Yee,et al. Modification of niobium film stress by low‐energy ion bombardment during deposition , 1982 .
[11] E. Hirsch,et al. Thin film annealing by ion bombardment , 1980 .
[12] M. Brodsky,et al. Electron spin resonance of ultrahigh vacuum evaporated amorphous silicon: In situ and ex situ studies , 1978 .
[13] E. Hirsch,et al. The effect of ion irradiation on the adherence of germanium films , 1978 .
[14] C. Weissmantel. Reactive film preparation , 1976 .
[15] J. Cuomo,et al. Property modification and synthesis by low energy particle bombardment concurrent with film growth , 1987 .
[16] P. Martin,et al. Ion-based methods for optical thin film deposition , 1986 .