Coulomb blockade in a silicon tunnel junction device

Single electron tunnel junctions have been formed in ultrathin silicon‐on‐insulator material by electron beam lithography and dry etching. Clear Coulomb blockade effects have been observed at 300 mK in the current‐voltage characteristics as a function of the voltage applied to a control sidegate. The effects are not smeared out by thermal fluctuations until temperatures greater than 4 K are reached.