Self-Aging-Prognostic GaN-Based Switching Power Converter Using TJ-Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling

[1]  Fu Lixing,et al.  Application reliability validation of GaN power devices , 2016 .

[2]  Namwon Kim,et al.  On condition monitoring of high frequency power GaN converters with adaptive prognostics , 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).

[3]  Rik W. De Doncker,et al.  Methodology for Active Thermal Cycle Reduction of Power Electronic Modules , 2019, IEEE Transactions on Power Electronics.

[4]  Marco Liserre,et al.  Active Thermal Control of GaN-Based DC/DC Converter , 2018, IEEE Transactions on Industry Applications.

[5]  U. Chung,et al.  Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs , 2013, IEEE Electron Device Letters.

[6]  Bernhard Wicht,et al.  Capacitive-coupled current sensing and Auto-ranging slope compensation for current mode SMPS with wide supply and frequency range , 2009, 2009 Proceedings of ESSCIRC.

[7]  Sameer Pendharkar,et al.  Application reliability validation of GaN power devices , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

[8]  J. Glaser,et al.  GaN Transistors for Efficient Power Conversion , 2019 .

[9]  Timothy Boles,et al.  GaN-on-silicon present challenges and future opportunities , 2017, 2017 12th European Microwave Integrated Circuits Conference (EuMIC).

[10]  M. Meneghini,et al.  Reliability and failure analysis in power GaN-HEMTs: An overview , 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).

[11]  Mounira Berkani,et al.  Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling , 2011, IEEE Transactions on Industrial Electronics.

[12]  Bruce M. Paine,et al.  Lifetesting GaN HEMTs With Multiple Degradation Mechanisms , 2015, IEEE Transactions on Device and Materials Reliability.

[13]  Dongsheng Brian Ma,et al.  15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling , 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).

[14]  Chunhua Zhou,et al.  EPC eGaN FETs Reliability Testing - Phase 6 , 2014 .

[15]  Andrew J. Forsyth,et al.  Impact of GaN HEMT dynamic on-state resistance on converter performance , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).

[16]  Lei Sun,et al.  In Situ Condition Monitoring of High-Voltage Discrete Power MOSFET in Boost Converter Through Software Frequency Response Analysis , 2016, IEEE Transactions on Industrial Electronics.

[17]  Bongtae Han,et al.  Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review , 2015, IEEE Transactions on Power Electronics.

[18]  Gaudenzio Meneghesso,et al.  Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications , 2014, IEEE transactions on power electronics.

[19]  Yufei Wu Degradation of GaN High Electron Mobility Transistors under High-power and High-temperature Stress , 2014 .

[20]  Xiaoxiao Yu,et al.  Control of Parallel Connected Power Converters for Low Voltage Microgrid—Part II: Dynamic Electrothermal Modeling , 2010, IEEE Transactions on Power Electronics.

[21]  B. Akin,et al.  Performance Degradation of GaN HEMTs Under Accelerated Power Cycling Tests , 2018, CPSS Transactions on Power Electronics and Applications.

[22]  Yingping Chen,et al.  EMI-Regulated GaN-Based Switching Power Converter With Markov Continuous Random Spread-Spectrum Modulation and One-Cycle on-Time Rebalancing , 2019, IEEE Journal of Solid-State Circuits.

[23]  C. Florian,et al.  Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches , 2018, IEEE Transactions on Power Electronics.

[24]  B. Akin,et al.  Investigation of Performance Degradation in Enhancement-Mode GaN HEMTs under Accelerated Aging , 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).

[25]  Yingping Chen,et al.  A 10MHz 5-to-40V EMI-regulated GaN power driver with closed-loop adaptive Miller Plateau sensing , 2017, 2017 Symposium on VLSI Technology.

[26]  R. McMahon,et al.  Temperature measurements of GaN FETs by means of average gate current sensing , 2015, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems.

[27]  B. Jayant Baliga,et al.  Gallium nitride devices for power electronic applications , 2013 .

[28]  Marco Liserre,et al.  Failure Analysis of the dc-dc Converter: A Comprehensive Survey of Faults and Solutions for Improving Reliability , 2018, IEEE Power Electronics Magazine.

[29]  Lei Chen,et al.  16.7 A 20V 8.4W 20MHz four-phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4ns constant propagation delay and 1ns switching rise time , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.

[30]  J. D. del Alamo,et al.  Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors , 2006, 2006 International Electron Devices Meeting.