Self-Aging-Prognostic GaN-Based Switching Power Converter Using TJ-Independent Online Condition Monitoring and Proactive Temperature Frequency Scaling
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[1] Fu Lixing,et al. Application reliability validation of GaN power devices , 2016 .
[2] Namwon Kim,et al. On condition monitoring of high frequency power GaN converters with adaptive prognostics , 2018, 2018 IEEE Applied Power Electronics Conference and Exposition (APEC).
[3] Rik W. De Doncker,et al. Methodology for Active Thermal Cycle Reduction of Power Electronic Modules , 2019, IEEE Transactions on Power Electronics.
[4] Marco Liserre,et al. Active Thermal Control of GaN-Based DC/DC Converter , 2018, IEEE Transactions on Industry Applications.
[5] U. Chung,et al. Impact of Channel Hot Electrons on Current Collapse in AlGaN/GaN HEMTs , 2013, IEEE Electron Device Letters.
[6] Bernhard Wicht,et al. Capacitive-coupled current sensing and Auto-ranging slope compensation for current mode SMPS with wide supply and frequency range , 2009, 2009 Proceedings of ESSCIRC.
[7] Sameer Pendharkar,et al. Application reliability validation of GaN power devices , 2016, 2016 IEEE International Electron Devices Meeting (IEDM).
[8] J. Glaser,et al. GaN Transistors for Efficient Power Conversion , 2019 .
[9] Timothy Boles,et al. GaN-on-silicon present challenges and future opportunities , 2017, 2017 12th European Microwave Integrated Circuits Conference (EuMIC).
[10] M. Meneghini,et al. Reliability and failure analysis in power GaN-HEMTs: An overview , 2017, 2017 IEEE International Reliability Physics Symposium (IRPS).
[11] Mounira Berkani,et al. Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling , 2011, IEEE Transactions on Industrial Electronics.
[12] Bruce M. Paine,et al. Lifetesting GaN HEMTs With Multiple Degradation Mechanisms , 2015, IEEE Transactions on Device and Materials Reliability.
[13] Dongsheng Brian Ma,et al. 15.6 A 10MHz i-Collapse Failure Self-Prognostic GaN Power Converter with TJ-Independent In-Situ Condition Monitoring and Proactive Temperature Frequency Scaling , 2019, 2019 IEEE International Solid- State Circuits Conference - (ISSCC).
[14] Chunhua Zhou,et al. EPC eGaN FETs Reliability Testing - Phase 6 , 2014 .
[15] Andrew J. Forsyth,et al. Impact of GaN HEMT dynamic on-state resistance on converter performance , 2017, 2017 IEEE Applied Power Electronics Conference and Exposition (APEC).
[16] Lei Sun,et al. In Situ Condition Monitoring of High-Voltage Discrete Power MOSFET in Boost Converter Through Software Frequency Response Analysis , 2016, IEEE Transactions on Industrial Electronics.
[17] Bongtae Han,et al. Physics-of-Failure, Condition Monitoring, and Prognostics of Insulated Gate Bipolar Transistor Modules: A Review , 2015, IEEE Transactions on Power Electronics.
[18] Gaudenzio Meneghesso,et al. Trapping and Reliability Assessment in D-Mode GaN-Based MIS-HEMTs for Power Applications , 2014, IEEE transactions on power electronics.
[19] Yufei Wu. Degradation of GaN High Electron Mobility Transistors under High-power and High-temperature Stress , 2014 .
[20] Xiaoxiao Yu,et al. Control of Parallel Connected Power Converters for Low Voltage Microgrid—Part II: Dynamic Electrothermal Modeling , 2010, IEEE Transactions on Power Electronics.
[21] B. Akin,et al. Performance Degradation of GaN HEMTs Under Accelerated Power Cycling Tests , 2018, CPSS Transactions on Power Electronics and Applications.
[22] Yingping Chen,et al. EMI-Regulated GaN-Based Switching Power Converter With Markov Continuous Random Spread-Spectrum Modulation and One-Cycle on-Time Rebalancing , 2019, IEEE Journal of Solid-State Circuits.
[23] C. Florian,et al. Dynamic RON Characterization Technique for the Evaluation of Thermal and Off-State Voltage Stress of GaN Switches , 2018, IEEE Transactions on Power Electronics.
[24] B. Akin,et al. Investigation of Performance Degradation in Enhancement-Mode GaN HEMTs under Accelerated Aging , 2018, 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA).
[25] Yingping Chen,et al. A 10MHz 5-to-40V EMI-regulated GaN power driver with closed-loop adaptive Miller Plateau sensing , 2017, 2017 Symposium on VLSI Technology.
[26] R. McMahon,et al. Temperature measurements of GaN FETs by means of average gate current sensing , 2015, 2015 IEEE 11th International Conference on Power Electronics and Drive Systems.
[27] B. Jayant Baliga,et al. Gallium nitride devices for power electronic applications , 2013 .
[28] Marco Liserre,et al. Failure Analysis of the dc-dc Converter: A Comprehensive Survey of Faults and Solutions for Improving Reliability , 2018, IEEE Power Electronics Magazine.
[29] Lei Chen,et al. 16.7 A 20V 8.4W 20MHz four-phase GaN DC-DC converter with fully on-chip dual-SR bootstrapped GaN FET driver achieving 4ns constant propagation delay and 1ns switching rise time , 2015, 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers.
[30] J. D. del Alamo,et al. Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors , 2006, 2006 International Electron Devices Meeting.