The Response of MOS Devices to Dose-Enhanced Low-Energy Radiation
暂无分享,去创建一个
P. S. Winokur | J. R. Schwank | P. V. Dressendorfer | L. J. Lorence | D. M. Fleetwood | W. Beezhold | P. Dressendorfer | D. Fleetwood | P. Winokur | J. Schwank | L. Lorence | W. Beezhold
[1] Bruce L. Draper,et al. Radiation effects in TaSix/polysilicon MOS gate structures , 1984 .
[2] D. B. Brown,et al. Photoelectron Effects on the Dose Deposited in MOS Devices by Low Energy X-Ray Sources , 1980, IEEE Transactions on Nuclear Science.
[3] C. Dozier,et al. Effect of Photon Energy on the Response of MOS Devices , 1981, IEEE Transactions on Nuclear Science.
[4] P. S. Winokur,et al. Accounting for Dose-Enhancement Effects with CMOS Transistors , 1985, IEEE Transactions on Nuclear Science.
[5] H. E. Boesch,et al. Charge Yield and Dose Effects in MOS Capacitors at 80 K , 1976, IEEE Transactions on Nuclear Science.
[6] P. S. Winokur,et al. Correlating the Radiation Response of MOS Capacitors and Transistors , 1984, IEEE Transactions on Nuclear Science.
[7] C. Dozier,et al. The Use of Low Energy X-Rays for Device Testing - A Comparison with Co-60 Radiation , 1983, IEEE Transactions on Nuclear Science.
[8] T. Sanford,et al. Radiation Output and Dose Predictions for Flash X-Ray Sources , 1984, IEEE Transactions on Nuclear Science.
[9] E. Burke,et al. Energy deposition by soft x-rays - an application to lithography for VLSI , 1979, IEEE Transactions on Nuclear Science.
[10] W. C. Johnson,et al. Frequency and temperature tests for lateral nonuniformities in MIS capacitors , 1977, IEEE Transactions on Electron Devices.
[11] T. R. Oldham,et al. Charge Collection Measurements for Heavy Ions Incident on n- and p-Type Silicon , 1983, IEEE Transactions on Nuclear Science.
[12] L. Palkuti,et al. X-Ray Wafer Probe for Total Dose Testing , 1982, IEEE Transactions on Nuclear Science.
[13] D. B. Brown,et al. Defect Production in SiO2 by X-Ray and Co-60 Radiations , 1985, IEEE Transactions on Nuclear Science.