This study investigates the properties of fluorosilicate glass film prepared by temperature-difference-based liquid-phase deposition. Experimental results indicate that the deposition temperature can significantly affect the deposition rate and film properties. As the deposition temperature increases from 15 to 35°C, the deposition rate increases exponentially from 30 to 687 A/h. Meanwhile, the F and OH contents increase from 2.56 to 3.49% and from 0.16 to 0.5%, respectively. The dielectric constants and stresses for the films deposited at 15, 25, and 35°C, are 3.56/63 MPa, 3.46/43 MPa, and 3.66/73 MPa, respectively. The current densities at 2 MV/cm for the films deposited at 15. 25, and 35°C are 6.9 × 10 -9 , 4.6 × 10 -9 , and 3.6 × 10 -7 A/cm 2 , respectively. For the film deposited at 25°C, the dielectric constant and the stress are minimal because of the high F content, low OH content, and low bond strain. The properties are also compared with those of fluorosilicate glass prepared by plasma-enhanced chemical vapor deposition. In addition to exhibiting a lower dielectric constant and much better resistance to moisture, the film prepared by temperature-difference-based liquid-phase deposition also shows a comparable or better insulating property, revealing a reliable intermetal dielectric with a low dielectric constant.