2 μm wavelength range InP-based type-II quantum well photodiodes heterogeneously integrated on silicon photonic integrated circuits.

The heterogeneous integration of InP-based type-II quantum well photodiodes on silicon photonic integrated circuits for the 2 µm wavelength range is presented. A responsivity of 1.2 A/W at a wavelength of 2.32 µm and 0.6 A/W at 2.4 µm wavelength is demonstrated. The photodiodes have a dark current of 12 nA at -0.5 V at room temperature. The absorbing active region of the integrated photodiodes consists of six periods of a "W"-shaped quantum well, also allowing for laser integration on the same platform.

[1]  A. Holmes,et al.  Optical gain modeling of InP based InGaAs(N)/GaAsSb type-II quantum wells laser for mid-infrared emission , 2013 .

[2]  N. Hattasan,et al.  Heterogeneous Integration of GaInAsSb p-i-n Photodiodes on a Silicon-on-Insulator Waveguide Circuit , 2011, IEEE Photonics Technology Letters.

[3]  D. Thomson,et al.  Silicon Photonic Waveguides and Devices for Near- and Mid-IR Applications , 2015, IEEE Journal of Selected Topics in Quantum Electronics.

[4]  A D Ellis,et al.  Demonstration of amplified data transmission at 2 µm in a low-loss wide bandwidth hollow core photonic bandgap fiber. , 2013, Optics express.

[5]  David J. Thomson,et al.  High-speed detection at two micrometres with monolithic silicon photodiodes , 2015, Nature Photonics.

[6]  A. Andrejew,et al.  InP-Based Type-II Quantum-Well Lasers and LEDs , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  Gunther Roelkens,et al.  Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip. , 2012, Optics express.

[8]  Stephan Sprengel,et al.  Continuous wave vertical cavity surface emitting lasers at 2.5 μm with InP-based type-II quantum wells , 2015 .

[9]  P. Verheyen,et al.  High-Responsivity Low-Voltage 28-Gb/s Ge p-i-n Photodetector With Silicon Contacts , 2015, Journal of Lightwave Technology.

[10]  R Baets,et al.  Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit. , 2006, Optics express.

[11]  van Pj René Veldhoven,et al.  Ultra-thin DVS-BCB adhesive bonding of III-V wafers, dies and multiple dies to a patterned silicon-on-insulator substrate , 2013 .

[12]  Gunther Roelkens,et al.  Silicon-Based Photonic Integration Beyond the Telecommunication Wavelength Range , 2014, IEEE Journal of Selected Topics in Quantum Electronics.

[13]  Markus Ortsiefer,et al.  Growth of InAs-containing quantum wells for InP-based VCSELs emitting at 2.3 μm , 2007 .

[14]  Baile Chen,et al.  InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region. , 2013, Optics letters.

[15]  J. Bowers,et al.  III‐V/silicon photonics for on‐chip and intra‐chip optical interconnects , 2010 .

[16]  John Bowers,et al.  Heterogeneously integrated 2.0 μm CW hybrid silicon lasers at room temperature. , 2015, Optics letters.