Metal-organic chemical vapor deposition

Metal-organic chemical vapor deposition (MOCVD) has become an important method in recent years for the growth of high-quality epitaxial layers of various semiconductor materials particularly for use in sophisticated heterostructure and quantum well laser structures. In a typical reactor lower-order metal alkyls, such as trimethylgallium (TMGa) and trimethylaluminum (TMA1), are mixed in the vapor phase with a hydride such as arsine.