Investigation of Strained GaInAsP Active Layer for AlGaInP Visible Laser

We demonstrated the growth of GalnAsP/AlGalnP heterostructures by MOVPE at 71OoC. The uniformity and controllability were good enough for laser fabrication. Integrated PL intensity showed that we could obtain longer wavelength by GalnAsP without serious degradation, rather than by GalnP. The time resolved PL and FWHM of 4K PL showed that the strained MQW had good interface qualities. An 53 laser using our strained GalnAsP had a COD power of over 100 mW and good reliability at 30mW 50oC. The properties of the GalnAsP quaternary alloy are very well suited to visible lasers.