A wave approach to signal and noise modeling of dual-gate MESFET

Summary A new procedure for signal and noise modeling of dual-gate MESFET is described in this paper. The small-signal model is based on two cascoded single-gate MESFET intrinsic equivalent circuits embedded in a network representing device parasitics. The wave interpretation of noise is used for defining the noise parameters of each single gate MESFET. Applying this approach, a CAD oriented procedure for extracting the dual-gate MESFETmodel parameters as well as the noise wave temperatures is developed. Modeled scattering and noise parameter characteristics are comparedto the measured ones and quite a good agreement is observed.

[1]  C. Tsironis,et al.  Microwave Wide-Band Model of GaAs Dual Gate MESFET's , 1982 .

[2]  M. Schoon,et al.  A novel, bias-dependent, small-signal model of the dual-gate MESFET , 1994 .

[3]  M. Pospieszalski.  Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence , 1989 .

[4]  R. P. Meys,et al.  A Wave Approach to the Noise Properties of Linear Microwave Devices , 1978 .

[5]  Tah-Hsiung Chu,et al.  Element extraction of GaAs dual-gate MESFET small-signal equivalent circuit , 1998 .

[6]  B. Milovanovic,et al.  Extraction of noise wave sources in MESFET wave representations , 1998, ICMMT'98. 1998 International Conference on Microwave and Millimeter Wave Technology. Proceedings (Cat. No.98EX106).

[8]  O. Pronic,et al.  MESFET noise modeling based on noise wave temperatures , 1999, 4th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services. TELSIKS'99 (Cat. No.99EX365).