论文信息 - Subthreshold kinks in fully depleted SOI MOSFET's

Subthreshold kinks in fully depleted SOI MOSFET's

Measured current-voltage characteristics of scaled, floating-body, fully depleted (FD) SOI MOSFET's that show subthreshold kinks controlled by the back-gate (substrate) bias are presented. The underlying physical mechanism is described, and is distinguished from the well known kink effect in partially depleted devices. The physical insight attained qualifies the meaning of FD/SOI and implies new design issues for low-voltage FD/SOI CMOS.

O. Faynot | S. Cristoloveanu | C. Raynaud | S. Krishnan | J.G. Fossum

[1] S. M. Sze,et al. Physics of semiconductor devices , 1969 .

[2] M. Matloubian,et al. Anomalous subthreshold current—Voltage characteristics of n-channel SOI MOSFET's , 1987, IEEE Electron Device Letters.

[3] Kazuya Matsuzawa,et al. Technology trends of silicon-on-insulator-its advantages and problems to be solved , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[4] James D. Plummer,et al. Investigation of body effect of fully depleted n channel SOI device as a function of body bias , 1994, Proceedings. IEEE International SOI Conference.

[5] Jerry G. Fossum,et al. Physical subthreshold MOSFET modeling applied to viable design of deep-submicrometer fully depleted SOI low-voltage CMOS technology , 1995 .

[6] Hyung-Kyu Lim,et al. Threshold voltage of thin-film Silicon-on-insulator (SOI) MOSFET's , 1983, IEEE Transactions on Electron Devices.

[7] J. Colinge. Silicon-on-Insulator Technology , 1991 .

[8] Jerry G. Fossum,et al. Analysis and control of floating-body bipolar effects in fully depleted submicrometer SOI MOSFET's , 1991 .

[9] Jerry G. Fossum,et al. Dynamic floating-body instabilities in partially depleted SOI CMOS circuits , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.