Magnetic and structural properties of Mn-implanted GaN

High doses (1015–5×1016 cm−2) of Mn+ ions were implanted into p-GaN at ∼350 °C and annealed at 700–1000 °C. At the high end of this dose range, platelet structures of GaxMn1−xN were formed. The presence of these regions correlated with ferromagnetic behavior in the samples up to ∼250 K. At low doses, the implanted led to a buried band of defects at the end of the ion range.

[1]  M. Kamińska,et al.  Magnetic and optical properties of GaMnN magnetic semiconductor , 2001 .

[2]  R. Fiederling,et al.  Injection and detection of a spin-polarized current in a light-emitting diode , 1999, Nature.

[3]  D. K. Young,et al.  Electrical spin injection in a ferromagnetic semiconductor heterostructure , 1999, Nature.

[4]  B. R. Bennett,et al.  Robust electrical spin injection into a semiconductor heterostructure , 2000 .

[5]  S. Kucheyev,et al.  Ion-beam-induced dissociation and bubble formation in GaN , 2000 .

[6]  D. Awschalom,et al.  Electron Spin and Optical Coherence in Semiconductors , 1999 .

[7]  Chennupati Jagadish,et al.  Damage Buildup in GaN under Ion Bombardment , 2000 .

[8]  P. Petroff,et al.  Formation of nanoscale ferromagnetic MnAs crystallites in low-temperature grown GaAs , 1997 .

[9]  G. Kamler,et al.  Raman scattering study of Ga1−xMnxN crystals , 2000 .

[10]  H. Bender,et al.  Nanometer-scale magnetic MnAs particles in GaAs grown by molecular beam epitaxy , 1996 .

[11]  Mark L. Johnson.  Hybrid ferromagnet-semiconductor devices , 1998 .

[12]  G. Medeiros-Ribeiro,et al.  Assembly of submicrometre ferromagnets in gallium arsenide semiconductors , 1995, Nature.

[13]  H. Akinaga,et al.  Magneto-optical properties and the potential application of GaAs with magnetic MnAs nanoclusters , 2000 .

[14]  S. Chu,et al.  Lattice‐mismatch‐generated dislocation structures and their confinement using superlattices in heteroepitaxial GaAs/InP and InP/GaAs grown by chemical beam epitaxy , 1989 .

[15]  Lin,et al.  Theory of diluted magnetic semiconductor ferromagnetism , 2000, Physical review letters.

[16]  G. Medeiros-Ribeiro,et al.  Magnetic properties and imaging of Mn‐implanted GaAs semiconductors , 1996 .

[17]  S. Kucheyev,et al.  Disordering and anomalous surface erosion of GaN during ion bombardment at elevated temperatures , 2001 .

[18]  H. Ohno,et al.  Zener model description of ferromagnetism in zinc-blende magnetic semiconductors , 2000, Science.

[19]  B. R. Bennett,et al.  Electrical spin injection across air-exposed epitaxially regrown semiconductor interfaces , 2000 .

[20]  H. Ohno.  Properties of ferromagnetic III–V semiconductors , 1999 .

[21]  M. Cai,et al.  Ferromagnetic properties and structures of the Mn-implanted GaAs semiconductor , 2000 .

[22]  Kikkawa,et al.  All-optical magnetic resonance in semiconductors , 2000, Science.