Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs
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S. Saini | A. Asenov | J. H. Davies | G. Slavcheva | A.R. Brown | A. Brown
[1] A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .
[2] P. Stolk,et al. Modeling statistical dopant fluctuations in MOS transistors , 1998 .
[3] Karl Goser,et al. Matching analysis of deposition defined 50-nm MOSFET's , 1998 .
[4] Zhiping Yu,et al. Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques , 1998 .
[5] M. R. Pinto,et al. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics , 1997 .
[6] A. Toriumi,et al. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's , 1994 .
[7] H. Wong,et al. Three-dimensional "atomistic" simulation of discrete random dopant distribution effects in sub-0.1 /spl mu/m MOSFET's , 1993, Proceedings of IEEE International Electron Devices Meeting.
[8] G. Iafrate,et al. Quantum correction to the equation of state of an electron gas in a semiconductor. , 1989, Physical review. B, Condensed matter.
[9] M. Ancona,et al. Macroscopic physics of the silicon inversion layer. , 1987, Physical review. B, Condensed matter.