High-performance thin-film transistors with solution-processed ScInO channel layer based on environmental friendly precursor

Thin-film transistors (TFTs) with solution-processed scandium (Sc) substituted indium oxide (ScxIn1−xO3, ScInO) thin films based on environmental friendly water-induced precursor were fabricated. As the Sc concentration increases from 0% to 10%, the mobility decreases from 23.7 cm2 V−1 s−1 to 6.4 cm2 V−1 s−1, which is attributed to the non-overlapping of the Sc3+ electron orbit. However, the off current decreases and the turn-ON voltage (VON) shifts towards the positive direction as the Sc content increases, which indicates lower carrier density after incorporation of Sc into In2O3. More interestingly, the incorporation of Sc into In2O3 can effectively improve the electrical stability of the TFT devices under gate bias stress, which is attributed to the reduction of the number of oxygen vacancies due to the relatively low standard electrode potential (−2.36) of Sc and strong bonding strength of Sc–O (680 kJ mol−1). The reduction of oxygen vacancies is confirmed by the x-ray photoelectron spectroscopy (XPS) experiments.

[1]  Yong‐Hoon Kim,et al.  Chemical durability engineering of solution-processed oxide thin films and its application in chemically-robust patterned oxide thin-film transistors , 2017 .

[2]  T. Nabatame,et al.  Phase transitions from semiconductive amorphous to conductive polycrystalline in indium silicon oxide thin films , 2016 .

[3]  Weijing Wu,et al.  High-Mobility and Good-Stability Thin-Film Transistors With Scandium-Substituted Indium Oxide Semiconductors , 2016, IEEE Transactions on Electron Devices.

[4]  Weijing Wu,et al.  Coffee-Ring Defined Short Channels for Inkjet-Printed Metal Oxide Thin-Film Transistors. , 2016, ACS applied materials & interfaces.

[5]  Miao Xu,et al.  High‐mobility flexible thin‐film transistors with a low‐temperature zirconium‐doped indium oxide channel layer , 2016 .

[6]  E. Fortunato,et al.  Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors , 2016 .

[7]  Miao Xu,et al.  High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature , 2016, Scientific Reports.

[8]  L. Lan,et al.  Facile patterning of amorphous indium oxide thin films based on a gel-like aqueous precursor for low-temperature, high performance thin-film transistors , 2016 .

[9]  P. Xiao,et al.  High-mobility thin film transistors with neodymium-substituted indium oxide active layer , 2015 .

[10]  Y. Rim,et al.  Hexaaqua Metal Complexes for Low-Temperature Formation of Fully Metal Oxide Thin-Film Transistors , 2015 .

[11]  J. Medvedeva,et al.  Cation Size Effects on the Electronic and Structural Properties of Solution‐Processed In–X–O Thin Films , 2015 .

[12]  L. Lan,et al.  Solution-processed indium-zinc-oxide thin-film transistors based on anodized aluminum oxide gate insulator modified with zirconium oxide , 2015 .

[13]  Lei Wang,et al.  Effects of Nd in NdxIn1-xO3 Semiconductors for Thin-Film Transistors , 2015, IEEE Transactions on Electron Devices.

[14]  T. Nabatame,et al.  Dopant selection for control of charge carrier density and mobility in amorphous indium oxide thin-film transistors: Comparison between Si- and W-dopants , 2015 .

[15]  L. Lan,et al.  Studies on NdxIn1−xO3 semiconducting thin films prepared by rf magnetron sputtering , 2014 .

[16]  B. Bae,et al.  Improved electrical performance and bias stability of solution-processed active bilayer structure of indium zinc oxide based TFT. , 2014, ACS applied materials & interfaces.

[17]  B. Bae,et al.  Improvement of bias stability of oxyanion-incorporated aqueous sol–gel processed indium zinc oxide TFTs , 2014 .

[18]  T. Nabatame,et al.  Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications , 2013, 1309.5183.

[19]  Shinhyuk Yang,et al.  An ‘aqueous route’ for the fabrication of low-temperature-processable oxide flexible transparent thin-film transistors on plastic substrates , 2013 .

[20]  Vivek Subramanian,et al.  Transparent High‐Performance Thin Film Transistors from Solution‐Processed SnO2/ZrO2 Gel‐like Precursors , 2013, Advanced materials.

[21]  L. Lan,et al.  High-Performance Indium–Gallium–Zinc Oxide Thin-Film Transistors Based on Anodic Aluminum Oxide , 2011, IEEE Transactions on Electron Devices.

[22]  Hyun Jae Kim,et al.  Carrier-suppressing effect of scandium in InZnO systems for solution-processed thin film transistors , 2010 .

[23]  R. Street.  Thin‐Film Transistors , 2009 .

[24]  A. Facchetti,et al.  Flexible Inorganic/Organic Hybrid Thin‐Film Transistors Using All‐Transparent Component Materials , 2007 .

[25]  H. Ohta,et al.  Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors , 2004, Nature.

[26]  Stephen R. Forrest,et al.  The path to ubiquitous and low-cost organic electronic appliances on plastic , 2004, Nature.

[27]  W. Milne,et al.  High‐Mobility ZnO Thin Film Transistors Based on Solution‐processed Hafnium Oxide Gate Dielectrics , 2015 .