Direct MBE growth of CdZnTe on Si(100) and Si(112) substrates for large-area HgCdTe IRFPAs

Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal films of ZnTe and CdZnTe/ZnTe onto Si(100) and Si(112) substrates. Parallel epitaxy of ZnTe(100) and CdZnTe(100)/ZnTe(100) has been observed for growth on Si(100) substrates misoriented from 0-8 degrees towards the [011] direction. With ZnTe initiation layers, high quality CdZnTe(100) films have been demonstrated on both 4° and 8° misoriented Si(100) with x-ray rocking curve FWHM as narrow as 158 arc-seconds, which is comparable to that obtained with GaAs/Si composite substrates. The observed surface morphologies are superior to those obtained on GaAs/Si composite substrates. HgCdTe(100) films with x-ray FWHM as low as 55 arcseconds and average etch pit densities of 5 x 106 cm2 have been deposited by liquid phase epitaxy on these MBE CdZnTe/ZnTe/Si(100) substrates. On vicinal Si(1 12) substrates, ZnTe films are observed to nucleate in either the (1 12) or its twin (552) orientation depending on the misorientation of the Si substrate away from (1 12). For Si(1 12) misorientations of 5° or 10° towards from the [1 1-1] direction, ZnTe nucleates in a parallel (1 12) orientation, while for misorientations of 0° or 5° away from the [1 1-1] direction, ZnTe is observed to nucleate in a (552) orientation. CdTe deposited on ZnTe/Si(112) is observed to nucleate in the same orientation as the ZnTe. CdTe(552) epilayers are of substantially higher quality than (1 12)oriented films. X-ray rocking curves as narrow as 1 10 arc-seconds have been observed for the CdTe(331) reflection in the case of (552)-oriented epitaxy.

[1]  H. F. Schaake,et al.  Kinetics of molecular‐beam epitaxial HgCdTe growth , 1988 .

[2]  Carl E. Bonner,et al.  Effects of Zn to Te ratio on the molecular‐beam epitaxial growth of ZnTe on GaAs , 1988 .

[3]  William J. Kaiser,et al.  Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy , 1989 .

[4]  John A. Roth,et al.  Direct molecular‐beam epitaxial growth of ZnTe(100) and CdZnTe(100)/ZnTe(100) on Si(100) substrates , 1993 .

[5]  Min-Shyong Lin,et al.  Physical properties of CdTe grown on Si by low pressure metalorganic chemical vapour deposition , 1986 .

[6]  R. F. Risser,et al.  MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAs , 1993 .

[7]  M. H. Kalisher,et al.  Optical techniques for composition measurement of bulk and thin‐film Cd1−yZnyTe , 1991 .

[8]  Tse Tung,et al.  Infinite-melt vertical liquid-phase epitaxy of HgCdTe from Hg solution: Status and prospects , 1988 .

[9]  S. Sivananthan,et al.  Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) , 1989 .

[10]  Michael Schenk,et al.  New defect etchants for CdTe and Hg1-xCdxTe , 1990 .

[11]  M. Zandian,et al.  Dislocation density reduction by thermal annealing of HgCdTe epilayers grown by molecular beam epitaxy on GaAs substrates , 2008 .

[12]  Owen K. Wu,et al.  Growth and properties of In- and As-doped HgCdTe by MBE , 1993 .

[13]  M. Oron,et al.  Determining the [001] crystal orientation of CdTe layers grown on (001) GaAs , 1988 .

[14]  G. Tompa,et al.  Heteroepitaxial HgCdTe/CdZnTe/GaAs/Si Materials for Infrared Focal Plane Arrays , 1990 .

[15]  S. Sivananthan,et al.  Current status of direct growth of CdTe and HgCdTe on silicon by molecular‐beam epitaxy , 1992 .

[16]  Christopher J. Summers,et al.  Molecular beam epitaxial growth and characterization of ZnTe and CdTe on (001) GaAs , 1988 .

[17]  R. Korenstein,et al.  Growth of (111) CdTe on GaAs/Si and Si substrates for HgCdTe epitaxy , 1992 .