The transport properties of current carriers in anthracene have been studied by a crystal counter technique. It has been shown that the charge pulses may be analyzed as the sum of two contributions, a primary component which varies linearly with time and which breaks at a time equal to the transit time, and a secondary component which is caused by slow release of holes from traps in the surface region. Analysis of both components leads to carrier mobilities, thermal dependence of carrier mobilities and of carrier populations, surface trap depths, etc. The interpretation of pulse height vs voltage behavior which is superlinear invokes recombination and/or detrapping processes which are field‐dependent. Experiments are presented which show that recombination at the surface is kinetically more important than recombination in the bulk. It is indicated that the photogeneration of charge carriers at the irradiated surface may be biphotonic.
[1]
R. Merrifield,et al.
Exciton—Exciton Interaction and Photoconductivity in Anthracene
,
1964
.
[2]
S. McGlynn,et al.
Hole Mobility in Organic Molecular Crystals
,
1964
.
[3]
D. C. Hoesterey.
Photocarrier Generation in Anthracene
,
1962
.
[4]
F. C. Brown,et al.
Low-Temperature Photoconductivity of Additively Colored KCl
,
1961
.
[5]
A. Michel.
Photoconductivity of Silver Chloride Crystals Under Pulsed X-Ray Irradiation
,
1961
.
[6]
R. Kepler.
Charge Carrier Production and Mobility in Anthracene Crystals
,
1960
.
[7]
O. H. Leblanc.
Hole and Electron Drift Mobilities in Anthracene
,
1960
.
[8]
K. Hecht.
Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen
,
1932
.