The temperature dependence of energy transfer between the Tm 3F4 and Ho 5I7 manifolds of Tm-sensitized Ho luminescence in YAG and YLF

Abstract The temperature dependence of the energy transfer process between the Tm 3F4 and Ho 5I7 manifolds in Tm : Ho doped laser materials is investigated. Decay data of luminescence in Tm : Ho : YAG and Tm : Ho : YLF in the temperature range 243–323 K are analyzed to extract energy transfer rates and elucidate the theoretical description of the energy distribution between Tm and Ho ions in solid host materials.