A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation
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Bing Chen | Peng Huang | Jinfeng Kang | Xiaoyan Liu | Bin Gao | Haitong Li | Jinfeng Kang | B. Gao | Xiaoyan Liu | Peng Huang | Bing Chen | Haitong Li
[1] Shimeng Yu,et al. Metal–Oxide RRAM , 2012, Proceedings of the IEEE.
[2] J. Yang,et al. State Dynamics and Modeling of Tantalum Oxide Memristors , 2013, IEEE Transactions on Electron Devices.
[3] Heng-Yuan Lee,et al. A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability , 2011, 2011 IEEE International Solid-State Circuits Conference.
[4] J Joshua Yang,et al. Memristive devices for computing. , 2013, Nature nanotechnology.
[5] Jinfeng Kang,et al. A physical based analytic model of RRAM operation for circuit simulation , 2012, 2012 International Electron Devices Meeting.
[6] B. Gao,et al. A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations , 2013, IEEE Transactions on Electron Devices.
[7] Jiale Liang,et al. Scaling Challenges for the Cross-Point Resistive Memory Array to Sub-10nm Node - An Interconnect Perspective , 2012, 2012 4th IEEE International Memory Workshop.
[8] Lin Chen,et al. Device and SPICE modeling of RRAM devices. , 2011, Nanoscale.
[9] Bing Chen,et al. RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study , 2013, IEEE Transactions on Electron Devices.
[10] Frederick T. Chen,et al. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM , 2008, 2008 IEEE International Electron Devices Meeting.
[11] X. A. Tran,et al. Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching , 2011, 2011 International Electron Devices Meeting.
[12] R. Waser,et al. Nanoionics-based resistive switching memories. , 2007, Nature materials.
[13] Shimeng Yu,et al. A SPICE Compact Model of Metal Oxide Resistive Switching Memory With Variations , 2012, IEEE Electron Device Letters.
[14] L. Goux,et al. Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation , 2012, 2012 International Electron Devices Meeting.