Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistance
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M. Rodwell | A. Gossard | Hong Lu | J. Law | H. Lu | S. Lee | A. Carter | Sanghoon Lee | Huang Cheng-ying
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M. Rodwell | A. Gossard | Hong Lu | J. Law | H. Lu | S. Lee | A. Carter | Sanghoon Lee | Huang Cheng-ying