Void-based photonic crystal mirror with high reflectivity and low dissipation for extreme-ultraviolet radiation

Abstract. The effects of void-based photonic crystal mirrors on reflectivity and dissipation for extreme-ultraviolet (EUV) radiation at near-normal illumination are studied. The mirrors are based on a multilayer coating comprising alternating layers of molybdenum (Mo) and silicon (Si) with 40 periods. By embedding voids in silicon films instead of molybdenum films, we found that the reflectivities of the mirror are increased and the absorptions of the mirror are decreased with the increments of the voids. On the other hand, the reflectivities of the mirror are decreased and the absorptions are increased by embedding voids in the molybdenum films, with the increments of the voids. Compared to the standard designs of 40 Mo/Si multilayer mirrors, which are currently used in most EUV or soft x-ray applications, the reflectivity of the void-based photonic crystal mirror in our study can reach from 73.43 to 83.24% and the absorption can decline from 26.18 to 16.80%. In consideration of EUV bandwidth, the effects of illumination angles in the six-mirror projection system, the intermixing layers, and the variation of the coated absorber thickness on the reflection properties are studied. The proposed concept can be used in next-generation EUV lithography and soft x-ray optical systems.

[1]  J. Braat,et al.  Design of multilayer extreme-ultraviolet mirrors for enhanced reflectivity. , 2000, Applied optics.

[2]  Florian Bociort,et al.  Network search method in the design of extreme ultraviolet lithographic objectives. , 2007, Applied optics.

[3]  Optical properties of a silicon-nanocrystal-based-microcavity prepared by evaporation , 2011 .

[4]  Chengyou Lin,et al.  Attosecond Stretcher–Compressor Using Aperiodic Multilayer , 2012, IEEE Photonics Journal.

[5]  Fengli Wang,et al.  Design of X-ray super-mirrors using simulated annealing algorithm , 2006 .

[6]  In-Yong Kang,et al.  Structural Characterization of a Mo/Ru/Si Extreme Ultraviolet (EUV) Reflector by Optical Modeling , 2004 .

[7]  Denis Bolshukhin,et al.  Xenon DPP source technologies for EUVL exposure tools , 2009, Advanced Lithography.

[8]  B. Li,et al.  Electrochemical fabrication of nanoporous polypyrrole film on HOPG using nanobubbles as templates , 2009 .

[9]  O. Solgaard,et al.  A Large-Area High-Reflectivity Broadband Monolithic Single-Crystal-Silicon Photonic Crystal Mirror MEMS Scanner With Low Dependence on Incident Angle and Polarization , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[10]  Han-Ku Cho,et al.  Properties of EUVL masks as a function of capping layer and absorber stack structures , 2007, SPIE Advanced Lithography.

[11]  Z. A. Munir,et al.  Fundamental investigations on the spark plasma sintering/synthesis process: I. Effect of dc pulsing on reactivity , 2005 .

[12]  Greg Hughes,et al.  Estimation of cost comparison of lithography technologies at the 22-nm half-pitch node , 2009, Advanced Lithography.

[13]  R. London,et al.  Damage mechanisms of MoN/SiN multilayer optics for next-generation pulsed XUV light sources. , 2011, Optics express.

[14]  Probing Ar ion induced nanocavities/bubbles in silicon by small-angle x-ray scattering , 2010 .

[15]  Vivek Bakshi,et al.  EUV Sources for Lithography , 2006 .

[16]  Chen-Kuei Chung,et al.  Fabrication and characterization of amorphous Si films by PECVD for MEMS , 2005 .

[17]  Piergiorgio Nicolosi,et al.  High performance EUV multilayer structures insensitive to capping layer optical parameters. , 2008, Optics express.

[18]  F. Salmassi,et al.  Developments in realistic design for aperiodic Mo/Si multilayer mirrors. , 2006, Optics express.

[19]  Vincent Wiaux,et al.  Lithography Options for the 32 nm Half Pitch Node and Beyond , 2009, IEEE Transactions on Circuits and Systems I: Regular Papers.

[20]  NbC/Si multilayer mirror for next generation EUV light sources. , 2012, Optics express.

[21]  Mehdi Asheghi,et al.  Phonon dominated heat conduction normal to Mo/Si multilayers with period below 10 nm. , 2012, Nano letters.

[22]  C. Carniglia,et al.  Maximum reflectance of multilayer dielectric mirrors in the presence of slight absorption , 1980 .

[23]  Eberhard Spiller,et al.  High-performance Mo-Si multilayer coatings for extreme-ultraviolet lithography by ion-beam deposition. , 2003, Applied optics.

[24]  Akira Endo Development Status of Laser Produced Plasma EUV Light Source , 2008 .

[25]  Piergiorgio Nicolosi,et al.  Aperiodic multilayers with enhanced reflectivity for extreme ultraviolet lithography. , 2008, Applied optics.

[26]  Hejun Li,et al.  C/SiC/Mo–Si–Cr multilayer coating for carbon/carbon composites against oxidation at high temperature , 2012 .

[27]  C. Jamois,et al.  New concepts of integrated photonic biosensors based on porous silicon , 2011 .

[28]  Piergiorgio Nicolosi,et al.  Design of aperiodic multilayer structures for attosecond pulses in the extreme ultraviolet. , 2007, Applied optics.

[29]  Kuen-Yu Tsai,et al.  Efficient scattering simulations for equivalent extreme ultraviolet mask multilayer structures by modified transmission line theory and finite-difference time-domain method , 2010 .