论文信息 - Reliability aspects of gate oxide under ESD pulse stress - 字舞流文

Reliability aspects of gate oxide under ESD pulse stress

Thomas Pompl | Wolfgang Stadler | Kai Esmark | Harald Gossner | Robert Gauthier | Kiran V. Chatty | Adrien Ille | Alain Bravaix | Tilo Brodbeck | David Alvarez | Philipp Riess | H. Gossner | T. Pompl | K. Chatty | R. Gauthier | K. Esmark | A. Bravaix | P. Riess | A. Ille | W. Stadler | T. Brodbeck | D. Alvarez

[1] G. G. Stokes. "J." , 1890, The New Yale Book of Quotations.

[2] J. W. Meredith,et al. Microelectronics reliability , 1988, IEEE Region 5 Conference, 1988: 'Spanning the Peaks of Electrotechnology'.

[3] Amitava Chatterjee,et al. Hot-electron reliability and ESD latent damage , 1988 .

[4] E. Cartier,et al. MECHANISM FOR STRESS-INDUCED LEAKAGE CURRENTS IN THIN SILICON DIOXIDE FILMS , 1995 .

[5] Wai Kin Chim,et al. NEUTRAL ELECTRON TRAP GENERATION AND HOLE TRAPPING IN THIN OXIDES UNDER ELECTROSTATIC DISCHARGE STRESS , 1998 .

[6] Jean Brini,et al. Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling , 1998 .

[7] Jordi Suñé,et al. Detection and fitting of the soft breakdown failure mode in MOS structures , 1999 .

[8] Wai Kin Chim,et al. Latent Damage Generation in Thin Oxides of Metal-Oxide-Semiconductor Devices under High-Field Impulse Stress and Damage Characterization Using Low-Frequency Noise Measurement , 2001 .

[9] Luca Selmi,et al. On interface and oxide degradation in VLSI MOSFETs. II. Fowler-Nordheim stress regime , 2002 .

[10] Jordi Suñé,et al. Quantitative two-step hydrogen model of SiO2 gate oxide breakdown , 2002 .

[11] S. Decoutere,et al. Impact of technology scaling on the input and output features of RF-MOSFETs: effects and modeling , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

[12] Rolf-Peter Vollertsen,et al. Is the power-law model applicable beyond the direct tunneling regime? , 2005, Microelectron. Reliab..

[13] T. Maurel,et al. Low voltage SILC and P- and N-MOSFET gate oxide reliability , 2005, Microelectron. Reliab..

[14] Jordi Suñé,et al. Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability , 2005, Microelectron. Reliab..

[15] A. Kerber,et al. Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides , 2006, Microelectron. Reliab..

[16] G. Meneghesso,et al. Electrostatic discharge effects in ultrathin gate oxide MOSFETs , 2006, IEEE Transactions on Device and Materials Reliability.

[17] V. Teslyuk,et al. IEEE International Reliability Physics Symposium , 2007 .

[18] Jen-Chou Tseng,et al. Effects of electrostatic discharge high-field current impulse on oxide breakdown , 2007 .