论文信息 - Modeling and simulation of homogeneous degradation for N-channel MOSFETS

Modeling and simulation of homogeneous degradation for N-channel MOSFETS

Abstract In this work, the effects of the degradation generated by homogeneous hot-electron injection in a one-dimensional model of current-voltage characteristics for short-channel MOSFETs are introduced. A distributed charge model, implemented in the SABER simulator is used. Simulation results obtained for n-MOS transistors demonstrate good agreement with the experimental data for interface state density inferior to 3 × 10 11 cm −2 eV −1 . The samples are degraded by homogeneous electron photoinjection and the interface trap density is performed by the pumping charge method.

R. Bouchakour | L. Hardy | M. Jourdain | I. Limbourg | J. J. Charlot

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